DTA determination of the high-pressure-high-temperature phase diagram of CdSeBOCKOWSKI, M; KRUKOWSKI, S; ŁUCZNIK, B et al.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 994-998, issn 0268-1242Article

GaN crystallization by the high-pressure solution growth method on HVPE bulk seedBOCKOWSKI, M; STRAK, P; GRZEGORY, I et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3924-3933, issn 0022-0248, 10 p.Conference Paper

The influence of free-carrier concentration on the PEC etching of GaN : A calibration with Raman spectroscopyLEWANDOWSKA, R; WEYHER, J. L; KELLY, J. J et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 298-301, issn 0022-0248, 4 p.Article

Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphireLESZCZYNSKI, M; PRYSTAWKO, P; SUSKI, T et al.Journal of alloys and compounds. 1999, Vol 286, Num 1-2, pp 271-275, issn 0925-8388Conference Paper

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWEYHER, J. L; SOCHACKI, T; BOCKOWSKI, M et al.Journal of crystal growth. 2014, Vol 403, pp 77-82, issn 0022-0248, 6 p.Conference Paper

Defects in GaN single crystals and homoepitaxial structuresWEYHER, J. L; KAMLER, G; NOWAK, G et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 135-142, issn 0022-0248, 8 p.Conference Paper

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystalsTUOMISTO, F; SUSKI, T; GEBICKI, W et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 289-292, issn 0370-1972, 4 p.Conference Paper

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2014, Vol 403, pp 48-54, issn 0022-0248, 7 p.Conference Paper

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaNBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

Secrets of GaN substrate properties for high luminousity of InGaN quantum wellsLESZCZYNSKI, M; GRZEGORY, I; PRYSTAWKO, P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69100G.1-69100G.10, issn 0277-786X, isbn 978-0-8194-7085-0, 1VolConference Paper

Structural defects in GaN crystals grown by HVPE on needle-shaped GaN seeds obtained under high N₂ pressureSMALC-KOZIOROWSKA, J; KAMLER, G; LUCZNIK, B et al.Journal of crystal growth. 2009, Vol 311, Num 5, pp 1407-1410, issn 0022-0248, 4 p.Article

High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowthKAMLER, G; LUCZNIK, B; PASTUSZKA, B et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3478-3481, issn 0022-0248, 4 p.Article

HVPE-GaN growth on misoriented ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; GRZEGORY, I et al.Journal of crystal growth. 2014, Vol 403, pp 32-37, issn 0022-0248, 6 p.Conference Paper

Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti maskAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2013, Vol 380, pp 99-105, issn 0022-0248, 7 p.Article

Etching, Raman and PL study of thick HVPE-grown GaNWEYHER, J. L; LEWANDOWSKA, R; MACHT, L et al.Materials science in semiconductor processing. 2006, Vol 9, Num 1-3, pp 175-179, issn 1369-8001, 5 p.Conference Paper

Growth of bulk GaN by HVPE on pressure grown seedsGRZEGORY, I; LUCZNIK, B; BOCKOWSKI, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 612107.1-612107.11, issn 0277-786X, isbn 0-8194-6163-6Conference Paper

Deposition of thick GaN layers by HVPE on the pressure grown GaN substratesLUCZNIK, B; PASTUSZKA, B; GRZEGORY, I et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 38-46, issn 0022-0248, 9 p.Conference Paper

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed―seed configurationGRZEGORY, I; BOCKOWSKI, M; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 50-55, issn 0022-0248, 6 p.Conference Paper

High nitrogen pressure solution growth of bulk GaN in feed-seed configurationBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1507-1510, issn 1862-6300, 4 p.Article

Platelets and needles : Two habits of pressure-grown GaN crystalsBOCKOWSKI, M; GRZEGORY, I; KAMLER, G et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 414-420, issn 0022-0248, 7 p.Conference Paper

CFD and reaction computational analysis of the growth of GaN by HVPE methodKEMPISTY, P; LUCZNIK, B; PASTUSZKA, B et al.Journal of crystal growth. 2006, Vol 296, Num 1, pp 31-42, issn 0022-0248, 12 p.Article

High nitrogen pressure solution growth (HNPSG) of GaN: Thermodynamics, growth method and physical propertiesKRUKOWSKI, S; GRZEGORY, I; POROWSKI, S et al.Vacuum science and technology : nitrides as seen by the technology 2002. 2002, pp 17-41, isbn 81-7736-198-8, 25 p.Book Chapter

Thermal properties of indium nitrideKRUKOWSKI, S; WITEK, A; GIERLOTKA, S et al.The Journal of physics and chemistry of solids. 1998, Vol 59, Num 3, pp 289-295, issn 0022-3697Article

Measurements of strain in AlGaN/GaN HEMT structures grown by plasma assisted molecular beam epitaxyBORYSIUK, J; SOBCZAK, K; WIERZBICKA, A et al.Journal of crystal growth. 2014, Vol 401, pp 355-358, issn 0022-0248, 4 p.Conference Paper